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RJH1CM6DPQ-E0 Dataheets PDF



Part Number RJH1CM6DPQ-E0
Manufacturers Renesas
Logo Renesas
Description IGBT
Datasheet RJH1CM6DPQ-E0 DatasheetRJH1CM6DPQ-E0 Datasheet (PDF)

Preliminary Datasheet RJH1CM6DPQ-E0 1200V - 20A - IGBT Application: Inverter Features  Short circuit withstand time (10 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 200 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 20 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0521EJ0300 Rev.3.00 Jan 19, 2012 O.

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Preliminary Datasheet RJH1CM6DPQ-E0 1200V - 20A - IGBT Application: Inverter Features  Short circuit withstand time (10 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 200 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 20 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0521EJ0300 Rev.3.00 Jan 19, 2012 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 IDF iDF(peak) Note1 PC Note2 j-c Note2 Tj Tstg Ratings 1200 30 40 20 80 20 80 297.6 0.42 150 –55 to +150 Unit V V A A A A A W °C/ W °C °C R07DS0521EJ0300 Rev.3.00 Jan 19, 2012 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH1CM6DPQ-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES/IR IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf tsc Min — — 4 — — — — — — — — — Typ — — — 2.1 1600 60 35 45 15 100 100 10 Max 5 ±1 8 — — — — — — — — — Unit A A V V pF pF pF ns ns ns ns s Test Conditions VCE = 1200 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 20 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VCC = 600 V, VGE = 15 V IC = 20 A Rg = 5  Inductive load VCC  720 V, VGE = 15 V Tc  125°C IF = 20 A Note3 IF = 20 A diF/dt = 100 A/s Short circuit withstand time FRD forward voltage FRD reverse recovery time Notes: 3. Pulse test. VF trr — — 1.7 200 — — V ns www.DataSheet.net/ R07DS0521EJ0300 Rev.3.00 Jan 19, 2012 Page 2 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH1CM6DPQ-E0 Preliminary Package Dimension Package Name TO-247 JEITA Package Code  RENESAS Code PRSS0003ZE-A Previous Code  MASS[Typ.] 6.0g Unit: mm 21.13 ± 0.33 6.15 15.94 ± 0.19 5.02 ± 0.19 3.60 ± 0.1 20.19 ± 0.38 4.5 max 0.1 2.10 + – 0.2 13.26 1.27 ± 0.13 5.45 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part Number RJH1CM6DPQ-E0#T2 450 pcs www.DataSheet.net/ Quantity Shipping Container Box (Tube) R07DS0521EJ0300 Rev.3.00 Jan 19, 2012 17.63 Page 3 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology.


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