RJH60M1DPP-M0

Preliminary Datasheet RJH60M1DPP-M0 600V - 8A - IGBT Application: Inverter R07DS0528EJ0300 Rev.3.00 May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (75 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C 1 23 1. Gate 2. Collector G 3. Emitter E Absolute Maximum Ratings Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 16 8 20 8 32 30 4.1 7.2 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A W °C/ W °C/ W °C °C R07DS0528EJ0300 Rev.3.00 May 25, 2012 Page 1 of 9 RJH60M1DPP-M0 Electrical Characteristics Item Collector to emitter breakdown voltage Zero gate voltage collector current / Diode reverse current Gate to e...