RJH60M3DPE

Preliminary Datasheet RJH60M3DPE 600 V - 17 A - IGBT Application: Inverter Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0533EJ0100 Rev.1.00 Sep 02, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E www.DataSheet.net/ 1. Gate 2. Collector 3. Emitter 4. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector peak current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cdNote2 Tj Tstg Ratings 600 ±30 35 17 70 17 70 113 1.11 4.2 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C R07DS0533EJ0100 Rev.1.00 Sep 02, 2011 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH60M3DPE Preliminary Electrical Characteristics (Ta = 25°C) Item...