RJH60M7DPQ-A0

Preliminary Datasheet RJH60M7DPQ-A0 600 V - 50 A - IGBT Application: Inverter Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0538EJ0100 Rev.1.00 Sep 02, 2011 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 90 50 200 50 200 300 0.42 1.07 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C R07DS0538EJ0100 Rev.1.00 Sep 02, 2011 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH60M7DPQ-A0 Preliminary Electrical Characteristics (Ta = 25°C) Ite...