IGBT
Preliminary Datasheet
RJH60D5DPQ-E0
600V - 37A - IGBT Application: Inverter
Features
Short circuit withstand time (5 ...
Description
Preliminary Datasheet
RJH60D5DPQ-E0
600V - 37A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 40 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0738EJ0100 Rev.1.00 Apr 19, 2012
Outline
RENESAS Package code: PRSS0003ZE-A (Package name: TO-247)
C
4 G
1. Gate 2. Collector 3. Emitter 4. Collector
E
1 2
3
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Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 IDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 75 37 150 30 120 200 0.63 2.1 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C
R07DS0738EJ0100 Rev.1.00 Apr 19, 2012
Page 1 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH60D5DPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Co...
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