IGBT
Preliminary Datasheet
RJH1CV5DPK
1200V - 25A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s...
Description
Preliminary Datasheet
RJH1CV5DPK
1200V - 25A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 165 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0746EJ0200 Rev.2.00 Jun 12, 2012
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C 4
G
1. Gate 2. Collector 3. Emitter 4. Collector
E
1
2
3
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Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 IDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 1200 30 50 25 75 25 75 245 0.51 0.69 150 –55 to +150 Unit V V A A A A A W °C/W °C/W °C °C
R07DS0746EJ0200 Rev.2.00 Jun 12, 2012
Page 1 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH1CV5DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Col...
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