RJH1CV7DPK

Preliminary Datasheet RJH1CV7DPK 1200V - 35A - IGBT Application: Inverter R07DS0748EJ0300 Rev.3.00 Feb 14, 2013 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 200 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 280 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 C 12 3 1. Gate 2. Collector G 3. Emitter 4. Collector E Absolute Maximum Ratings Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 IDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 1200 30 70 35 105 35 105 320 0.39 0.69 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A W °C/W °C/W °C °C R07DS0748EJ0300 Rev.3.00 Feb 14, 2013 Page 1 of 9 RJH1CV7DPK Electrical Characteristics Item Zero gate voltage collector current / Diode reverse current Gate to emitt...