RJP65S07DWT

Preliminary Datasheet RJP65S07DWT/RJP65S07DWA 650V - 150A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.) R07DS0824EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S07DWT-80 2 C Wafer: RJP65S07DWA-80 3 2 3 1G 1 3 1. Gate 2. Collector (The back) 3. Emitter E 3 3 www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 650 ±30 300 150 150 Unit V V A A C Notes: 1. This data is a regulated value in evaluation Package. R07DS0824EJ0001 Rev.0.01 Jul 05, 2012 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJP65S07DWT/RJP65S07DWA Preliminary Electrical Characteristics (These data are an actual measurement value in evaluation package.) (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf tsc Min — — 5.0 — — — — — — — — 10 Typ — — — 1.60 12.5 0.5 0.4 90 100 400 80 — Max 1 ±1 6.8 — — — — — — — — — Unit A A V V nF nF nF ns ns ns ns s Test Conditions VCE = 650 V, VGE = 0 VGE = ±30 V, VCE = 0 ...