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RJP65S08DWA Dataheets PDF



Part Number RJP65S08DWA
Manufacturers Renesas
Logo Renesas
Description IGBT
Datasheet RJP65S08DWA DatasheetRJP65S08DWA Datasheet (PDF)

Preliminary Datasheet RJP65S08DWT/RJP65S08DWA 650V - 200A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.) R07DS0825EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S08DWT-80 2 C Wafer: RJP65S08DWA-80 3 2 3 1G 1 3 1. Gate 2. Collector (The back) 3. Emitter E 3 3 www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) Item Colle.

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Preliminary Datasheet RJP65S08DWT/RJP65S08DWA 650V - 200A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.) R07DS0825EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S08DWT-80 2 C Wafer: RJP65S08DWA-80 3 2 3 1G 1 3 1. Gate 2. Collector (The back) 3. Emitter E 3 3 www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 650 ±30 400 200 150 Unit V V A A C Notes: 1. This data is a regulated value in evaluation package. R07DS0825EJ0001 Rev.0.01 Jul 05, 2012 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJP65S08DWT/RJP65S08DWA Preliminary Electrical Characteristics (These data are an actual measurement value in evaluation package.) (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf tsc Min — — 5.0 — — — — — — — — 10 Typ — — — 1.60 17.0 0.7 0.6 120 130 600 80 — Max 1 ±1 6.8 — — — — — — — — — Unit A A V V nF nF nF ns ns ns ns s Test Conditions VCE = 650 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 4 mA IC = 200 A, VGE = 15 V Note2 VCE = 25 V VGE = 0 f = 1 MHz VCC = 300 V IC = 200 A VGE =±15 V Rg = 10 , Tc = 125 C Inductive load VCC  360 V , VGE = 15 V Tc = 150 C Note3 Short circuit withstand time Notes: 2. Pulse test. 3. Switching time test circuit and waveform are shown below. Switching Time Test Circuit Waveform VGE Diode clamp L VCC D.U.T Rg 90% 10% www.DataSheet.net/ IC 90% 90% 10% td(off) tf td(on) 10% tr R07DS0825EJ0001 Rev.0.01 Jul 05, 2012 Page 2 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJP65S08DWT/RJP65S08DWA Preliminary Die Dimension 1.31 7.89 Gate bonding pad Emitter bonding pad (1) 1.55 Emitter bonding pad (2) 10.6 0.81 1.55 Emitter bonding pad (3) Emitter bonding pad (4) 9.26 Unit: mm 10.6 www.DataSheet.net/ Note 1. Illustration Part of white Part of dotted line Part of hatching Definition Al pattern Bonding area Final passivation Note 2. Note 3. The back of the chip is processed with Au evaporation. Recognition, target and any other patterns which are not related to Diode operation, may be changed without notice. Ordering Information Orderable Part Number RJP65S08DWA-80#W0 RJP65S08DWT-80#X0 R07DS0825EJ0001 Rev.0.01 Jul 05, 2012 1.98 1.98 1.98 1.98 Page 3 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems;.


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