IGBT
Preliminary Datasheet
RJP1CS06DWT/RJP1CS06DWA
Silicon N Channel IGBT Application: Inverter
Features
Low collector to ...
Description
Preliminary Datasheet
RJP1CS06DWT/RJP1CS06DWA
Silicon N Channel IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0829EJ0002 Rev.0.02 Jul 05, 2012
Outline
Die: RJP1CS06DWT-80
2 C 3
Wafer: RJP1CS06DWA-80
2
1G
1
3
1. Gate 2. Collector (The back) 3. Emitter
E 3
3
www.DataSheet.net/
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 1250 ±30 200 100 150 Unit V V A A C
Notes: 1. This data is a regulated value in evaluation package.
R07DS0829EJ0002 Rev.0.02 Jul 05, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJP1CS06DWT/RJP1CS06DWA
Preliminary
Electrical Characteristics (These data are an actual measurement value in evaluation package.)
(Ta = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf tsc Min — — 5.0 — — — — — — — — 10 Typ — — — 1.8 10.0 0.30 0.23 70 60 420 130 — Max 1 ±1 6.8 2.3 — — — — — — — — Unit A A V V nF nF nF ns ns ns ns s Test Conditions VCE = 1250 V, VGE = 0 VGE = ±30 ...
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