Silicon N-Channel IGBT
Preliminary Datasheet
RJP60D0DPK
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand t...
Description
Preliminary Datasheet
RJP60D0DPK
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding R07DS0166EJ0300 Rev.3.00 Jul 13, 2011
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C
G
1. Gate 2. Collector 3. Emitter
1
2
3
E
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Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VCES VGES IC IC ic(peak) Note1 PC Note2 j-c Note2 Tj Tstg Ratings 600 ±30 45 22 90 140 0.89 150 –55 to +150 Unit V V A A A W °C/ W °C °C
R07DS0166EJ0300 Rev.3.00 Jul 13, 2011
Page 1 of 6
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RJP60D0DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc ...
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