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2N5337A-220M Dataheets PDF



Part Number 2N5337A-220M
Manufacturers Seme LAB
Logo Seme LAB
Description Silicon NPN Epitaxial Planar Transistor
Datasheet 2N5337A-220M Datasheet2N5337A-220M Datasheet (PDF)

2N5337A-220M MECHANICAL DATA Dimensions in mm 1 0.6 0.8 4.6 SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE 16.5 3.6 Dia. 1 3 .5 1 0 .6 FEATURES • HERMETIC METAL PACKAGES 1 23 1 3 .7 0 • HIGH RELIABILITY • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS • FULLY ISOLATED 1.0 2 .5 4 BSC 2. 70 BSC APPLICATIONS • POWER LINEAR AND SWITCHING APPLICATIONS • GENERAL PURPOSE POWER TO220 PACKAGE Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unles.

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2N5337A-220M MECHANICAL DATA Dimensions in mm 1 0.6 0.8 4.6 SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE 16.5 3.6 Dia. 1 3 .5 1 0 .6 FEATURES • HERMETIC METAL PACKAGES 1 23 1 3 .7 0 • HIGH RELIABILITY • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS • FULLY ISOLATED 1.0 2 .5 4 BSC 2. 70 BSC APPLICATIONS • POWER LINEAR AND SWITCHING APPLICATIONS • GENERAL PURPOSE POWER TO220 PACKAGE Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector - Base voltage (IE = 0) Collector - Emitter voltage (IB = 0) Emitter - Base voltage (IC = 0) Collector current Base current Total power dissipation at Tcase = 25°C Storage Temperature Junction Temperature 80V 80V 6V 5A 1A 10W –65 to 200°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.8/00 2N5337A-220M ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ICBO ICEO IEBO VCEO(sus)* VCE(sat)* VBE(sat)* hFE* fT Collector cut-off current Collector cut-off current Emitter cut-off current Collector - Emitter Sustaining voltage Collector - Emitter Saturation voltage Base - Emitter Saturation voltage DC Current gain Transition frequency Test Conditions IE = 0 IB = 0 VEB = 6V IB = 0 IC = 5A IC = 2A IC = 2A IC = 0.5A IC = 2A IC = 5A IC = 0.5A VCB = 80V VCE = 75V IC =50mA IB = 0.5A IB = 0.2A IB = 0.2A VCE = 2V VCE = 2V VCE = 2V VCE = 10V Min. Typ. Max. 10 100 100 Unit m A 80 1.2 0.7 1.2 60 60 40 10 240 MHz V *Pulsed : Pulse duration = 300 ms , duty cycle = 1.5% SWITCHING CHARACTERISTICS Parameter ton ts tr On Time Storage Time Fall Time (td + tr) Test Conditions IC = 2A VCC = 10V IB1 = 0.2A IC = 2A VCC = 10V IB1 = –IB2 = 0.2A Max. 0.7 2.0 0.8 Unit s ms ms m THERMAL DATA RTHj-case Thermal resistance junction - case Max. 17.5°C/W ** Smooth flat surface using thermal grease. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.8/00 .


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