2N5339

2N5336 2N5338 2N5337 2N5339 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar NPN transistors designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC 2N5336 2N5338 2N5337 2N5339 80 100 80 100 6.0 5.0 1.0 6.0 -65 to +200 29 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5336 2N5337 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=Rated VCBO ICEV VCE=75V, VEB=1.5V ICEV VCE=90V, VEB=1.5V ICEV VCE=75V, VEB=1.5V, TC=150°C ICEV VCE=90V, VEB=1.5V, TC=150°C ICEO VCE=75V ICEO VCE=90V IEBO VEB=6.0V BVCEO IC=50mA VCE(SAT) IC=2.0A, IB=200mA VCE(SAT) IC=5.0A, IB=500mA VBE(SAT) IC=2.0A, IB=200mA VBE(SAT) IC=5.0A, IB=500mA hFE VCE=2.0V, IC=500mA (2N5336, 2N5338) hFE VCE=2.0V, IC=500mA (2N5337, 2N5339) hFE VCE=2.0V, IC=2.0A (2N5336, 2N5338) hFE VCE=2.0V, IC=2.0A (2N5337, 2N5339) hFE VCE=2.0V, IC=5.0A (2N5336, 2N5338) hFE VCE=2.0V, IC=5.0A (2N5337, 2N5339) 80 30 60 30 60 20 40 10 10 1.0 100 100 0.7 1.2 1.2 1.8 120 240 - 2N5338 2N5339 MIN ...