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2N5366

Fairchild Semiconductor

PNP General Purpose Amplifier

2N5366 2N5366 PNP General Purpose Amplifier • This device is designed for general purpose amplifiers applications at co...


Fairchild Semiconductor

2N5366

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Description
2N5366 2N5366 PNP General Purpose Amplifier This device is designed for general purpose amplifiers applications at collector currents to 300mA. Sourced from process 68. 1 TO-92 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current - Continuous Operating and Storage Junction Temperature Range Value 40 40 4.0 500 -55 ~ +150 Units V V V mA °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO ICBO ICES IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 10µA IC = 10µA VCB = 40V VCB = 40V VEB = 4.0V VCE = 10V, IC = 2.0mA VCE = 1.0V, IC = 50mA VCE = 5.0V, IC = 300mA IC = 50mA, IB = 2.5mA IC = 300mA, IB = 30mA IC = 50mA, IB = 2.5mA IC = 300mA, IB = 30mA VCE = 10V, IC = 2.0mA VCB = 10V, f = 1MHz VCB = 0.5V, f = 1MHz VCE = 10V, IC = 2.0mA, f = 1MHz 80 450 0.5 80 100 40 IC = 10mA Min. 40 40 4.0 100 100 10 300 0.25 1.0 1.1 2.0 0.8 8.0 35 V pF pF V Typ. Max. Units V V V nA nA µA VCE(sat) VBE(sat) VBE(on) Cob Cib hfe Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Input Capacitance Small-Signal Current Gain Thermal Characteristics TA=25°C ...




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