2N5366 Amplifier Datasheet

2N5366 Datasheet, PDF, Equivalent


Part Number

2N5366

Description

PNP General Purpose Amplifier

Manufacture

Fairchild Semiconductor

Total Page 4 Pages
Datasheet
Download 2N5366 Datasheet


2N5366
2N5366
PNP General Purpose Amplifier
• This device is designed for general purpose amplifiers applications at
collector currents to 300mA.
• Sourced from process 68.
1 TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
- Continuous
Operating and Storage Junction Temperature Range
Value
40
40
4.0
500
-55 ~ +150
Units
V
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
ICBO
ICES
IEBO
hFE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Collector-Emitter Saturation Voltage
VBE(on)
Cob
Cib
hfe
Base-Emitter On Voltage
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Test Condition
IC = 10µA
Min. Typ. Max. Units
40 V
IC = 10mA
IC = 10µA
40 V
4.0 V
VCB = 40V
100 nA
VCB = 40V
VEB = 4.0V
100 nA
10 µA
VCE = 10V, IC = 2.0mA
VCE = 1.0V, IC = 50mA
VCE = 5.0V, IC = 300mA
80
100 300
40
IC = 50mA, IB = 2.5mA
IC = 300mA, IB = 30mA
0.25 V
1.0
IC = 50mA, IB = 2.5mA
IC = 300mA, IB = 30mA
1.1
2.0
VCE = 10V, IC = 2.0mA
0.5 0.8 V
VCB = 10V, f = 1MHz
8.0 pF
VCB = 0.5V, f = 1MHz
35 pF
VCE = 10V, IC = 2.0mA, f = 1MHz 80 450
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
°PD Total Device Dissipation
Derate above 25 C
RθJA
Thermal Resistance, Junction to Ambient
Max.
625
5.0
200
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, July 2002

2N5366
Package Dimensions
TO-92
4.58
+0.25
–0.15
0.46 ±0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
0.38
+0.10
–0.05
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, July 2002


Features 2N5366 2N5366 PNP General Purpose Ampli fier • This device is designed for ge neral purpose amplifiers applications a t collector currents to 300mA. • Sour ced from process 68. 1 TO-92 1. Emit ter 2. Collector 3. Base Absolute Maxi mum Ratings TC=25°C unless otherwise n oted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Col lector-Base Voltage Emitter-Base Voltag e Collector current - Continuous Operat ing and Storage Junction Temperature Ra nge Value 40 40 4.0 500 -55 ~ +150 Unit s V V V mA °C Electrical Characterist ics TC=25°C unless otherwise noted Sym bol VCBO VCEO VEBO ICBO ICES IEBO hFE P arameter Collector-Base Breakdown Volta ge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collecto r Cut-off Current Collector Cut-off Cur rent Emitter Cut-off Current DC Current Gain Test Condition IC = 10µA IC = 10 µA VCB = 40V VCB = 40V VEB = 4.0V VCE = 10V, IC = 2.0mA VCE = 1.0V, IC = 50mA VCE = 5.0V, IC = 300mA IC = 50mA, IB = 2.5mA IC = 300mA, IB = 30mA IC =.
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