2N5369RLRA Transistors Datasheet

2N5369RLRA Datasheet, PDF, Equivalent


Part Number

2N5369RLRA

Description

JFET Chopper Transistors

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download 2N5369RLRA Datasheet


2N5369RLRA
2N5638, 2N5639
2N5638 is a Preferred Device
JFET Chopper Transistors
N–Channel – Depletion
N–Channel Junction Field Effect Transistors, depletion mode (Type
A) designed for chopper and high–speed switching applications.
Low Drain–Source “ON” Resistance:
RDS(on) = 30for 2N5638
RDS(on) = 60for 2N5639
Low Reverse Transfer Capacitance
Crss = 4.0 pF (Max) @ f = 1.0 MHz
Fast Switching Characteristics
tr = 5.0 ns (Max) (2N5638)
MAXIMUM RATINGS
Rating
Symbol
Drain–Source Voltage
Drain–Gate Voltage
Reverse Gate–Source Voltage
Forward Gate Current
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VDS
VDG
VGSR
IGF
PD
Storage Temperature Range
Operating Junction Temp Range
Tstg
TJ
Value
30
30
30
10
Unit
Vdc
Vdc
Vdc
mAdc
310
2.82
–65 to +150
–65 to +135
mW
mW/°C
°C
°C
RL
+
VDD
ID
*
(RDS(on)
)
50)
VDD = 10 Vdc
0.1 mF
50
INPUT
(SCOPE A)
10%
90%
td(off)
td(on)
tf
90%
10%
OUTPUT
(SCOPE B)
PULSE
GENERATOR
RL
VGS(on)
TO
+ – 50 OHM
0.001 mF SCOPE B
VGS(off)
1.0 k
tr
50 Ohms
50 TO
50 OHM
SCOPE A
50 SCOPE
TEKTRONIX 567A
OR EQUIVALENT
Figure 1. Switching Times Test Circuit
http://onsemi.com
1 DRAIN
3
GATE
2 SOURCE
TO–92
CASE 29
1 STYLE 5
2
3
MARKING DIAGRAMS
2N
5638
YWW
2N
5639
YWW
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
2N5638RLRA
TO–92 2000/Tape & Reel
2N5639
TO–92
5000/Box
2N5369RLRA
TO–92 2000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 3
1
Publication Order Number:
2N5638/D

2N5369RLRA
2N5638, 2N5639
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –1.0 µAdc, VDS = 0) V(BR)GSS
35
Vdc
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
IGSS
ā1.0 nAdc
1.0 µAdc
Drain–Cutoff Current
(VDS = 15 Vdc, VGS = –12 Vdc)
(VDS = 15 Vdc, VGS = –12 Vdc, TA = 100°C)
(VDS = 15 Vdc, VGS = –8.0 Vdc)
(VDS = 15 Vdc, VGS = –8.0 Vdc, TA = 100°C)
2N5638
2N5638
2N5639
2N5639
ID(off)
µAdc
1.0
1.0
1.0
1.0
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (Note 1.)
(VDS = 20 Vdc, VGS = 0)
Drain–Source “ON” Voltage
(ID = 12 mAdc, VGS = 0)
(ID = 6.0 mAdc, VGS = 0)
Static Drain–Source “ON” Resistance
(ID = 1.0 mAdc, VGS = 0)
2N5638
IDSS
50
– mAdc
2N5639
25 –
VDS(on)
Vdc
2N5638
– 0.5
2N5639
– 0.5
2N5638
2N5639
RDS(on)
30
60
SMALL–SIGNAL CHARACTERISTICS
Static Drain–Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
2N5638
2N5639
RDS(on)
30
60
Input Capacitance
(VDS = 0, VGS = –12 Vdc, f = 1.0 MHz)
Ciss
– 10
pF
Reverse Transfer Capacitance (VDS = 0, VGS = –12 Vdc, f = 1.0 MHz)
Crss
– 4.0
pF
SWITCHING CHARACTERISTICS (VDD = 10 Vdc, VGS(on) = 0, VGS(off) = –10 Vdc, RG’ = 50 . See Figure 1 on page 1)
Turn–On Delay Time
ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639
td(on)
– 4.0
– 6.0
ns
Rise Time
ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639
tr
– 5.0
– 8.0
ns
Turn–Off Delay Time
Fall Time
ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639
ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639
td(off)
tf
– 5.0
– 10
– 10
– 20
ns
ns
1. Pulse Width 300 µs, Duty Cycle 3.0%.
http://onsemi.com
2


Features 2N5638, 2N5639 2N5638 is a Preferred Dev ice JFET Chopper Transistors N–Chann el – Depletion N–Channel Junction F ield Effect Transistors, depletion mode (Type A) designed for chopper and high –speed switching applications. • L ow Drain–Source “ON” Resistance: • • http://onsemi.com 1 DRAIN RDS (on) = 30Ω for 2N5638 RDS(on) = 60Ω for 2N5639 Low Reverse Transfer Capaci tance Crss = 4.0 pF (Max) @ f = 1.0 MHz Fast Switching Characteristics tr = 5. 0 ns (Max) (2N5638) 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain–Source V oltage Drain–Gate Voltage Reverse Gat e–Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temp Range Sym bol VDS VDG VGSR IGF PD 310 2.82 Tstg T J –65 to +150 –65 to +135 mW mW/°C °C °C Y WW = Year = Work Week Value 30 30 30 10 Unit Vdc Vdc Vdc mAdc 2N 56 38 YWW 2N 5639 YWW 1 2 3 TO–92 CASE 2 9 STYLE 5 MARKING DIAGRAMS VDD = 10 Vdc V RL + DD * (RDS(on) ) 50) ID 50 PULSE GENERATOR INPUT (SCOPE .
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