Ordering number:ENN1047C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1246/2SC3114
High-VEBO, AF Amp Applications
F...
Ordering number:ENN1047C
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1246/2SC3114
High-VEBO, AF Amp Applications
Features
· High VEBO. · Wide ASO and highly resistant to breakdown.
Package Dimensions
unit:mm 2003B
[2SA1246/2SC3114]
5.0 4.0 4.0
0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3
5.0
( ) : 2SA1246
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
www.DataSheet.net/
1.3
1.3
1 : Emitter 2 : Collector 3 : Base SANYO : NP
Conditions
Ratings (–)60 (–)50 (–)15 (–)150 (–)300 400 150 –55 to +150
Unit V V V mA mA mW
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common base Output Capacitance Collector-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VCB=(–)40V, IE=0 VEB=(–)10V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA VCB=(–)6V, f=1MHz IC=(–)50mA, IB=(–)5mA 100* 100 (4.2)3.0 (–)0.5 Conditions Ratings min typ max (–)0.1 (–)0.1 560* MHz pF V Unit µA µA
* : The 2SA1246/2SC3114 are classified as follows according to hFE at 1mA.
Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 U 280 to 560
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Any and all SANYO products described or contained herein do not have specifications that can handle app...
