INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SD103
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Power Dissipation: PC= 25W(Max)@TC=25℃ Complement to Type 2SB503
APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IE IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collec.