2N5400

2N5400 Preferred Device Amplifier Transistors PNP Silicon Features Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 120 130 5.0 600 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 123 STRAIGHT LEAD BULK PACK 1 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM 2N 5400 AYWW G G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 2 1 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be ...