AP1801GU

AP1801GU Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package D 2021-8 S S S D D G D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 70mΩ -4A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. D G The 2021-8 J-lead package provides good on-resistance performance and space saving like SC-70-6. S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 www.DataSheet.net/ Rating -20 ±12 -4 -3.3 20 1.6 0.013 -55 to 150 -55 to 150 Unit V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 78 Unit ℃/W Data and specifications subject to change without notice 200111051 Datasheet pdf - http://www.DataSheet4U.co.kr/ AP1801GU Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -20 -0.5 - Typ. 0.01 10 11 2 4 10 16 26 16 740 160 130 6.6 Max. 52 70 100 -1.2 -1 -10 ±100 18 1180 10 Unit V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ...