N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP18T20GH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fas...
Description
AP18T20GH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
200V 175mΩ 13.4A
S
Description
AP18T20 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for commercial-industrial surface mount applications and using infrared reflow technique and suited for high current application due to the low connection resistance.
G D S
TO-252(H)
Absolute Maximum Ratings
www.DataSheet.net/
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 200 +20 13.4 8.5 40 83.3 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 1.5 62.5
Unit ℃/W ℃/W 1 201207251
Data & specifications subject to change without notice
Datasheet pdf - http://www.DataSheet4U.co.kr/
AP18T20GH-HF
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