2N5415

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 Philips Semiconductors Product specification PNP high-voltage transistors FEATURES Low current (max. 200 mA) High voltage (max. 300 V). APPLICATIONS Switching and linear amplification in military, industrial and consumer equipment. 1 handbook, halfpage 2N5415; 2N5416 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION DESCRIPTION PNP high-voltage transistor in a TO-39 metal package. 3 2 2 3 MAM334 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N5415 2N5416 VCEO collector-emitter voltage 2N5415 2N5416 ICM Ptot hFE peak collector current total power dissipation DC current gain 2N5415 2N5416 fT transition frequency IC = −10 mA; VCE = −10 V; f = 5 MHz Tamb ≤ 50 °C IC = −50 mA; VCE = −10 V 30 30 15 150 120 − MHz open base − − − − −200 −300 400 1 V V mA W open emitter − − −200 −350 V V CONDITIONS MIN. MAX. UNIT 1997 May 21 2 Philips Semiconductors Product specification PNP high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO 2N5415 2N5416 VCEO collector-emitter voltage 2N5415 2N5416 VEBO emitter-base voltage 2N5415 2N5416 IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collector current peak base...