2N5415S

2N5415S HIGH-VOLTAGE AMPLIFIER DESCRIPTION The 2N5415S is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO I CM Pt o t T st g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Peak Current Total Power Dissipation at T amb ≤ 25 °C at T cas e ≤ 25 °C Storage and Junction Temperature Value – 200 – 200 –4 –1 1 10 – 55 to 200 Unit V V V A W W °C 1/4 2N5415S THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I CEO I E BO V( BR) CEO * Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (I B = 0) Emitter Cutoff Current (I C = 0) Collector-emitter Breakdown Voltage (I B = 0) Collector-emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition Frequency Collector-base Capacitance Test Conditions V CB = – 175 V V CE = – 150 V V EB = – 4 V Min. Typ. Max. – 50 – 50 – 20 Unit µA µA µA I C = – 2 mA – 200 V V CE( sat )* VB E * h F E* fT C CBO I C = – 50 mA I C = – 50 mA I C = – 50 A I C = – 10 mA f = 5 MHz IE = 0 f = 1 MHz I B = – 5 mA V CE = – 10 V V CE = – 10 V V CE = – 10 V 15 V CB = – 10 V 30 – 2.5 – 1.5 150 V V MHz ...