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2N5430 Dataheets PDF



Part Number 2N5430
Manufacturers Seme LAB
Logo Seme LAB
Description MEDIUM POWER NPN SILICON TRANSISTOR
Datasheet 2N5430 Datasheet2N5430 Datasheet (PDF)

LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N5430 MEDIUM POWER NPN SILICON TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (0.028) 0.86 (0.034) Designed for switching and wide - band amplifier applications 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) This product is available screened in accordance with various military specs. 1.27 (0.050) 1.91 (0.750) 9.14 (0.360) min. 4.83 (0.190) 5.33 (0..

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LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N5430 MEDIUM POWER NPN SILICON TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (0.028) 0.86 (0.034) Designed for switching and wide - band amplifier applications 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) This product is available screened in accordance with various military specs. 1.27 (0.050) 1.91 (0.750) 9.14 (0.360) min. 4.83 (0.190) 5.33 (0.210) EG. 2N5430CECC–QR–B Built and screened in accordance with CECC procedures. Screened to sequence B. TO66 Package. Pin 1 Base Pin 2 Emitter Case Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC IB PD Tj Tstg RqJC Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current – Continuous Base Current Total Device Dissipation at Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance, Junction to Case. 100 V 100 V 6V 7A 1A 40 W 228 mW / °C –65 to 200°C 4.37 °C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 1/94 LAB OFF CHARACTERISTICS SEME 2N5430 Parameter BVCEO (sus)* ICBO ICEX ICBO IEBO Collector – Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Test Conditions IC = 50mA , IB = 0 VCE = 90V , IB = 0 VCE = 90V , VEB(off) = 1.5V VCE = 90V , VEB(off) = 1.5V , TC = 150°C VCB = Rated VCB , IE = 0 VBE = 6V , IC = 0 Min 100 Max Unit V 100 10 1.0 10 100 mA mA mA mA mA ON CHARACTERISTICS Parameter hFE* DC Current Gain Test Conditions IC = 500mA , VCE = 2V IC = 2A , VCE = 2V IC = 5A , VCE = 2V IC = 2A , IB = 0.2A IC = 7A , IB = 0.7A IC = 2A , IB = 0.2A IC = 7A , IB = 0.7A Min 60 60 40 Max 240 Unit — VCE(sat)* VBE(sat)* Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage 0.7 1.2 1.2 2.0 V V DYNAMIC CHARACTERISTICS Parameter fT Cob Cib Current Gain Bandwidth Product Output Capacitance Input Capacitance Test Conditions IC = 500 mA, VCE = 10V, f = 10 MHz VCB = 10V, IE = 0, f = 100 kHz VBE = 2V, IC = 0, f = 100 kHz Min 30 Max Unit MHz 250 1000 pF pF SWITCHING CHARACTERISTICS Parameter td tr ts tf Delay Time Rise Time Storage Time Fall Time Test Conditions VCC = 40V, VEB(off) = 3V IC = 2A, IB1 = 200mA VCC = 40V, IC = 2A IB1 = IB2 = 200mA Min Max 100 100 2.0 200 Unit ns ns ms ns * Pulse Test: Pulse width = 300 ms, Duty Cycle = 2.0 % Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 1/94 .


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