2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459
Discrete POWER & Signal Technologies
2N5457 2N5458 2N5459
M...
2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459
Discrete POWER & Signal Technologies
2N5457 2N5458 2N5459
MMBF5457 MMBF5458 MMBF5459
G
D G S
TO-92
D
SOT-23
Mark: 6D / 61S / 6L
S
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching
transistors, and can be used for analog switching applications. Sourced from Process 55.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25 - 25 10 -55 to +150
Units
V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5457 625 5.0 83.3 200
Max
*MMBF5457 350 2.8 357
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
ã 1997 Fairchild Semiconductor Corporation
2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459
N-Channel General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter...