2N5460

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5460/D JFET Amplifiers P–Channel — Depletion 3 GATE 2 DRAIN 2N5460 thru 2N5462 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGSR IG(f) PD TJ Tstg Value 40 40 10 350 2.8 – 65 to +135 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C 1 2 3 CASE 29–04, STYLE 7 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 30 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100°C) (VGS = 30 Vdc, VDS = 0, TA = 100°C) Gate – Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 µAdc) Gate – Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) (VDS = 15 Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) V(BR)GSS 2N5460, 2N5461, 2N5462 IGSS 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 VGS(off) — — 0.75 1.0 1.8 0.5 0.8 1.5 — — — — — — — — 5.0 1.0 6.0 7.5 9.0 4.0 4.5 6.0 nAdc µAdc Vdc 40 — — Vdc VGS Vdc ON CHARACTERISTICS Zero – Gate –Voltage Drain Current (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 IDSS – 1.0 – 2.0 – 4.0 — — — – 5.0 – 9.0 – 16 mAdc SMALL– SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 V...