AP1280AGN3

Advanced Power Electronics Corp. FEATURES Ideal for DDR-I, DDR-II and DDR-III VTT Applications Sink and Source up to 2Amp Integrated Power MOSFETs Generates Termination Voltage for SSTL_2, SSTL_18, HSTL, SCSI-2 and SCSI-3 Interfaces. High Accuracy Output Voltage at Full-Load Output Adjustment by Two External Resistors Built-in Soft-start Function Shutdown for Suspend to RAM (STR) Functionality with High-Impedance Output Current Limiting Protection On-Chip Thermal Protection Available in DFN 3x3-8L Packages VIN and VCNTL Under Voltage Protection RoHS Compliant and 100% Lead (Pb)-Free AP1280AGN3 DESCRIPTIOON The AP1280AGN3 is a simple, cost-effective and high-speed linear regulator designed to generate termination voltage in double data rate (DDR) memory system to comply with the JEDEC SSTL_2 and SSTL_18 or other specific interfaces such as HSTL, SCSI-2 and SCSI-3 etc. devices requirements. The regulator is capable of actively sinking or sourcing up to 2A while regulating an output voltage to within 40mV. The output termination voltage cab be tightly regulated to track 1/2VDDQ by two external voltage divider resistors or the desired output voltage can be pro-grammed by externally forcing the REFEN pin voltage. The AP1280AGN3 also incorporates a high-speed differential amplifier to provide ultra-fast response in line/load transient. Other features include extremely low initial offset voltage, excellent load regulation, current limiting in bi-directions and on-chip thermal shut-...