PowerTrench SyncFETTM. FDMS0312S Datasheet

FDMS0312S Datasheet PDF, Equivalent


Part Number

FDMS0312S

Description

N-Channel PowerTrench SyncFETTM

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDMS0312S Datasheet PDF


FDMS0312S Datasheet
FDMS0312S
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 4.9 m:
July 2011
Features
General Description
„ Max rDS(on) = 4.9 m: at VGS = 10 V, ID = 18 A
„ Max rDS(on) = 5.8 m: at VGS = 4.5 V, ID = 14 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
The FDMS0312S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Desktop
Top
Bottom
Pin 1
S
S
S
G
www.DataSheet.net/
Power 56
D
D
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
42
83
19
90
60
46
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMS0312S
Device
FDMS0312S
Package
Power 56
(Note 1a)
2.7
50
°C/W
Reel Size
3 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS0312S Rev.D
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.co.kr/

FDMS0312S Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
V
18 mVC
500 PA
100 nA
On Characteristics (Note 2)
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
1.2 1.9 3.0
V
ID = 10 mA, referenced to 25 °C
-5 mV/°C
VGS = 10 V, ID = 18 A
VGS = 4.5 V, ID = 14 A
VGS = 10 V, ID = 18 A, TJ = 125 °C
VDS = 5 V, ID = 18 A
3.6 4.9
4.7 5.8 m:
5 6.2
97 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2120
735
90
1.1
2820
975
135
2.2
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 18 A,
VGS = 10 V, RGEN = 6 :
www.DataSheet.net/
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 18 A
12 21 ns
5 10 ns
28 44 ns
4 10 ns
33 46 nC
15 22 nC
6.5 nC
4.0 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 18 A
(Note 2)
(Note 2)
0.48 0.7
0.80 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 18 A, di/dt = 300 A/Ps
26 42 ns
26 42 nC
Notes:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. EAS of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 16 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS0312S Rev.D
2
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.co.kr/


Features Datasheet pdf .
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