NVD5117PL

NVD5117PL MOSFET – Power, Single, P-Channel -60 V, 16 mW, -61 A Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage VGS "20 V Continuous Drain Cur- TC = 25°C ID rent RqJC (Note 1) Steady TC = 100°C Power Dissipation RqJC State TC = 25°C PD (Note 1) TC = 100°C −61 A −43 118 W 59 Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1 & 2) Steady TA = 100°C Power Dissipation RqJA State TA = 25°C PD (Notes 1 & 2) TA = 100°C −11 A −8 4.1 W 2.1 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM −419 A Current Limited by Package (Note 3) TA = 25°C IDmaxpkg 60 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C 175 Source Current (Body Diode) IS −118 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 40 A, L = 0.3 mH, RG = 25 W) EAS 240 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Jun...