2N5609

Power Transistors INCHANGEâ 2N5609 Silicon PNP Transistors Features With TO-66 package Designed for use as high-frequency drivers in audio amplifier Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VEBO ICP IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 5.0 25 150 -55~150 RATING 80 80 5.0 UNIT V V V A A W TO-66 Electrical Characteristics Tc=25 SYMBOL ICBO IEBO ICEO VCBO V(BR)CEO VEBO VCEsat-1 VCEsat-2 VCEsat-3 VCEsat-4 hFE-1 hFE-2 hFE-3 hFE-4 VBE(sat)1 VBE(sat)2 VBE(sat)3 fT tf ts PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltages Collector-emitter saturation voltages Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio Base-emitter saturation voltages Base-emitter saturation voltages Base-emitter saturation voltages Transition frequency at f = 1MHz Fall time Tum-off storage time IC=1A,VCE=2V 1.0 V IC=2.5A,VCE=5V 70 200 IC =1A; IB =0.1A 0.5 V IC=10mA,IB=0 80 V CONDITIONS VCB =80V;IE=0 VEB =5V, IC=0 MIN MAX 10 10 UNIT A A ...