2N5629 2N5630 NPN 2N6029 2N6030 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRI...
2N5629 2N5630
NPN 2N6029 2N6030
PNP
COMPLEMENTARY SILICON POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power
transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC
2N5629 2N6029
100
2N5630 2N6030
120
100 120
7.0
16
20
5.0
200
-65 to +200
0.875
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEX
VCE=Rated VCEO, VEB=1.5V
ICEX
VCE=Rated VCEO, VEB=1.5V, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=7.0V
...
