AP25G45GEM

AP25G45GEM Pb Free Plating Product Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Pick Current Capability ▼ 4.5V Gate Drive ▼ Strobe Flash Applications C C C C N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCE ICP 450V 150A C G E G E SO-8 E E Absolute Maximum Ratings Symbol VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Parameter Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range www.DataSheet.net/ Rating 450 ±6 ±8 150 2.5 -55 to 150 -55 to 150 Units V V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Cies Coes Cres RthJA 1 Parameter Gate-Emitter Leakage Current Collector-Emitter Leakage Current (Tj=25℃) Test Conditions VGE=± 6V, VCE=0V VCE=450V, VGE=0V VGE=4.5V, ICP=150A (Pulsed) Min. 0.35 - Typ. 6 64.5 7 30 11.5 24.5 150 3.3 2227 200 79 - Max. 10 10 8 1.2 50 Units uA uA V V nC nC nC ns ns ns µs pF pF pF ℃/W Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=VGE, IC=250uA IC=50A VCE=360V VGE=4.5V VCC=225V IC=50A RG=25Ω VGE=10V VGE=0V VCE=25V f=1.0MHz Thermal Resistance Junction-Ambient Notes: 1.Surface mounted on 1 in2 copper pad ...