IRG7SC12FPBF

PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 °C 3 μS short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package C VCES = 600V IC = 8A, TC = 100°C G E tSC ≥ 3μs, TJ(max) = 150°C n-channel VCE(on) typ. = 1.60V C Benefits High Efficiency in a HVAC, Refrigerator applications Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI www.DataSheet.net/ E G D2Pak IRG7SC12FPbF G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Max. 600 24 13 8 Units V A c 24 32 ± 30 69 28 -55 to +150 °C V W Thermal Resistance Parameter RθJC RθCS RθJA Thermal Resistance Junction-to-Case e Min. ––– ––– ––– Typ. ––– 0.50 40 Max. 1.8 ––– ––– Units °C/W Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) 1 www.irf.com 03/25/11 Datashee...