2N5639

2N5639 2N5639 N-Channel Switch This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51. 1 TO-92 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TC=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 30 -30 50 -55 ~ +150 Units V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Symbol Off Characteristics V(BR)GSS IGSS ID(off) IDSS rDS(on) rds(on) Ciss Crss td(on) tr td(off) tf Parameter Test Condition VDS = 0, IG = -10µA VGS = -15V, VDS = 0 VDS = 12V, VGS = 15V VDS = 20V, IGS = 0 VGS = 0V, ID = 1.0mA VDS = VGS = 0, f = 1.0kHz VDS = 0, VGS = 12V, f = 1.0MHz VDS = 0V, VGS = 12V, f = 1.0MHz VDD = 10V, VGS(on) = 0 VGS(off) = -12, ID(on) = 12mA RG = 50Ω 25 60 60 10 4.0 6.0 8.0 10 20 Min. -30 -1.0 1.0 Typ. Max. Units V nA nA mA Ω Ω pF pF ns ns ns ns Gate-Source Breakdown Voltage Gate Reverse Current Drain Cutoff Leakage Current Zero-Gate Voltage Drain Current * Drain-Source On Resistance Drain-Source On Resistance Input C...