DMN1019UFDE

ADVANCE INFORMATION DMN1019UFDE 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 12V RDS(ON) max 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package U-DFN2020-6 (Type E) ID max TA = +25°C 11A 10 9A 8A 5A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Applications  Load Switching  Battery Management Application  Power Management Functions Pin1 U-DFN2020-6 (Type E) ESD PROTECTED Bottom View Mechanical Data  Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classificati...