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AP98T03GS-HF Dataheets PDF



Part Number AP98T03GS-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description (AP98T03GP/S-HF) N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP98T03GS-HF DatasheetAP98T03GS-HF Datasheet (PDF)

AP98T03GP/S-HF RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 2.8mΩ 200A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. G The TO-263 package is widely preferred for commercial-industrial surface mount ap.

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AP98T03GP/S-HF RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 2.8mΩ 200A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. G The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP98T03GP) are available for low-profile applications. D TO-220(P) S G D Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 www.DataSheet.net/ S TO-263(S) Units V V A A A W W/℃ ℃ ℃ Rating 30 +20 200 125 800 156 1.25 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 0.8 40 62 Units ℃/W ℃/W ℃/W 1 201208174 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Datasheet pdf - http://www.DataSheet4U.co.kr/ AP98T03GP/S-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.5V, ID=30A Min. 30 0.8 - Typ. 75 71 9 41 14 78 74 136 1210 1200 1 Max. Units 2.8 4 2.5 10 +100 115 2 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VGS= +20V, VDS=0V ID=30A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz www.DataSheet.net/ 4960 7940 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=40A, VGS=0V IS=10A, VGS=0V dI/dt=100A/µs Min. - Typ. 54 74 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A, calculated continuous current based on maximum allowable junction temperature is 200A. 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 Datasheet pdf - http://www.DataSheet4U.co.kr/ AP98T03GP/S-HF 300 150 T C = 25 C 250 o ID , Drain Current (A) 200 ID , Drain Current (A) 10 V 7.0 V 5.0 V 4.5 V T C = 1 50 o C 120 10V 7.0V 5.0V 4.5V V G = 3.0 V 90 150 V G = 3.0 V 100 60 30 50 0 0 1 2 3 4 5 0 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.2 2.0 I D =30A 3 T C =25 o C 1.6 I D =40A V G =10V Normalized RDS(ON) RDS(ON) (mΩ) 2.8 1.2 2.6 www.DataSheet.net/ 0.8 2.4 2.2 2 4 6 8 10 0.4 -50 0 50 100 150 V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 40 30 1.2 20 Normalized VGS(th) 1.2 1.4 T j =150 o C IS(A) T j =25 o C 0.8 10 0.4 0 0 0.2 0.4 0.6 0.8 1 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ AP98T03GP/S-HF f=1.0MHz 12 8000 I D = 30 A VGS , Gate to Source Voltage (V) 10 8 V DS = 15 V V DS = 18 V V DS = 24 V C (pF) 6000 C iss 4000 6 4 2000 2 C oss C rss 0 0 20 40 60 80 100 120 140 160 0 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Dut.


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