Document
AP98T03GP/S-HF
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 2.8mΩ 200A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. G The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP98T03GP) are available for low-profile applications.
D
TO-220(P)
S
G
D
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1 3
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S
TO-263(S)
Units V V A A A W W/℃ ℃ ℃
Rating 30 +20 200 125 800 156 1.25 -55 to 150 -55 to 150
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 0.8 40 62
Units ℃/W ℃/W ℃/W 1 201208174
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Datasheet pdf - http://www.DataSheet4U.co.kr/
AP98T03GP/S-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.5V, ID=30A
Min. 30 0.8 -
Typ. 75 71 9 41 14 78 74 136 1210 1200 1
Max. Units 2.8 4 2.5 10 +100 115 2 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VGS= +20V, VDS=0V ID=30A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz
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4960 7940
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=40A, VGS=0V IS=10A, VGS=0V dI/dt=100A/µs
Min. -
Typ. 54 74
Max. Units 1.3 V ns nC
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A, calculated continuous current based on maximum allowable junction temperature is 200A. 4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
Datasheet pdf - http://www.DataSheet4U.co.kr/
AP98T03GP/S-HF
300
150
T C = 25 C
250
o
ID , Drain Current (A)
200
ID , Drain Current (A)
10 V 7.0 V 5.0 V 4.5 V
T C = 1 50 o C
120
10V 7.0V 5.0V 4.5V V G = 3.0 V
90
150
V G = 3.0 V
100
60
30
50
0 0 1 2 3 4 5
0 0 1 2 3 4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.2
2.0
I D =30A
3
T C =25 o C
1.6
I D =40A V G =10V Normalized RDS(ON)
RDS(ON) (mΩ)
2.8
1.2
2.6
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0.8 2.4
2.2 2 4 6 8 10
0.4 -50 0 50 100 150
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.6
40
30
1.2
20
Normalized VGS(th)
1.2 1.4
T j =150 o C IS(A)
T j =25 o C
0.8
10
0.4
0 0 0.2 0.4 0.6 0.8 1
0 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j ,Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
Datasheet pdf - http://www.DataSheet4U.co.kr/
AP98T03GP/S-HF
f=1.0MHz
12 8000
I D = 30 A
VGS , Gate to Source Voltage (V)
10
8
V DS = 15 V V DS = 18 V V DS = 24 V
C (pF)
6000
C iss
4000
6
4 2000 2
C oss C rss
0 0 20 40 60 80 100 120 140 160
0 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Dut.