SSM3J325F

SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J325F ○ Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 311 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 231 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 179 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 150 mΩ (max) (@VGS = -4.5 V) +0.5 2.5-0.3 +0.25 1.5-0.15 1 2 3 +0.1 0.4-0.05 2.9±0.2 1.9 0.95 0.95 Absolute Maximum Ratings (Ta = 25°C) 0.3 +0.1 0.16-0.06 +0.2 1.1-0.1 Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID (Note 1) -2.0 A Pulse IDP (Note 1) -4.0 Power dissipation PD (Note 2) 600 mW t = 1s 1200 Channel temperature Tch 150 °C S-MINI 1.Gate 2.Source 3.Drain 0~0.1 Storage temperature range Tstg −55 to 150 °C JEDEC TO-236MOD Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA SC-59 temperature, etc.) may cause this product to decrease in the TOSHIBA 2-3F1F reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 12 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure ra...