SSM3J327F

SSM3J327F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J327F ○ Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 242 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 170 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 125 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 95 mΩ (max) (@VGS = -4.5 V) +0.5 2.5-0.3 +0.25 1.5-0.15 1 2 3 +0.1 0.4-0.05 2.9±0.2 1.9 0.95 0.95 Absolute Maximum Ratings (Ta = 25°C) 0.3 +0.1 0.16-0.06 +0.2 1.1-0.1 Characteristic Symbol Rating Unit Drain-Source voltage VDSS -20 V 0~0.1 Gate-Source voltage VGSS ±8 V Drain current DC ID (Note 1) -3.5 A Pulse IDP (Note 1) -7.0 Power dissipation PD (Note 2) 600 mW t = 1s 1200 Channel temperature Tch 150 °C S-MINI 1.Gate 2.Source 3.Drain Storage temperature range Tstg −55 to 150 °C JEDEC TO-236MOD Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA TOSHIBA SC-59 2-3F1F reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 12 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, e...