Silicon P-Channel MOSFET
MOSFETs Silicon P-Channel MOS (U-MOS�)
SSM3J327R
1. Applications
• Power Management Switches
2. Features
(1) 1.5-V drive...
Description
MOSFETs Silicon P-Channel MOS (U-MOS�)
SSM3J327R
1. Applications
Power Management Switches
2. Features
(1) 1.5-V drive (2) Low drain-source on-resistance
: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Internal Circuit
SOT-23F
SSM3J327R
1: Gate 2: Source 3: Drain
©2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2009-12
2021-10-21 Rev.1.0
SSM3J327R
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
-20
V
VGSS
±8
V
Drain current (DC)
(Note 1)
ID
-3.9
A
Drain current (pulsed)
(Note 1), (Note 2)
IDP
-7.8
Power dissipation
(Note 3)
PD
1
W
Power dissipation
t = 10 s
(Note 3)
2
Channel temperature Storage temperature
Tch
150
�
Tstg
-55 to 150
�
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i....
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