TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualifie...
TECHNICAL DATA
NPN POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
Symbol
VCEO VCBO VCER VEBO IB IC
@ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range Total Power Dissipation
PT TJ, Tstg 2N5660 2N5661 5.0 87.5
2N5660 2N5661 2N5662 2N5663 200 300 250 400 250 400 6.0 0.5 2.0 2N5660 2N5662 2N5661 2N5663 2.0(1) 1.0(2) (3) 20 15(4) -65 to +200 2N5662 2N5663 6.67 145.8
Unit
Vdc Vdc Vdc Vdc Adc Adc
TO-66* (TO-213AA) 2N5660, 2N5661
W W 0 C
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) 2) 3)
Symbol
RθJC
Unit
0
C/W
4)
RθJA Derate linearly 11.4 mW/0C for TA >+ 250C Derate linearly 5.7 mW/0C for TA > +250C Derate linearly 200 mW/0C for TC > +1000C Derate linearly 150 mW/0C for TC > +1000C
TO-5* 2N5662, 2N5663
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Breakdown Voltage IC = 10 mAdc, RBE = 100Ω Emitter-Base Breakdown Voltage IE = 10 µAdc 2N5660, 2N5662 2N5661, 2N5663 2N5660, 2N5662 2N5661, 2N5663 V(BR)CEO 200 300 250 400 6.0 Vdc
V(BR)CER V(BR)EBO
Vdc Vdc
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