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VOM617A

Vishay Semiconductors

GaAs infrared emitting diode emitter

www.vishay.com VOM617A Vishay Semiconductors Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package A1 C...


Vishay Semiconductors

VOM617A

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Description
www.vishay.com VOM617A Vishay Semiconductors Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package A1 C2 4C 3E i179089 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Design Tools Related Documents DESCRIPTION The 110 °C rated VOM617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. These coupling devices are designed for signal transmission between two electrically separated circuits. FEATURES Operating temperature from -55 °C to +110 °C SOP-4 mini-flat package Isolation test voltage, 3750 VRMS Low saturation voltage Fast switching times Low coupling capacitance End-stackable, 0.100" (2.54 mm) spacing CTR range 50 % to 600 %, IF = 5 mA Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PLCs Telecommunication Lighting control system Solar inverters AC drives AGENCY APPROVALS (All parts are certified under base model VOM617A) UL1577 cUL DIN EN 60747-5-5 (VDE 0884-5), available with option 1 CQC FIMKO ORDERING INFORMATION V OM 6 1 7 A - # X 0 0 1 T # SOP-4 PART NUMBER CTR VDE OPTION TAPE BIN AND ≥5 REEL AGENCY CERTIFIED/ PACKAGE CTR (%) 5 mA UL, cUL, FIMKO, CQC 50 to 600 63 to 125 100 to 200 160 to 320 250 to 5...




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