2N5745

TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433 Devices 2N4399 2N5745 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC RθJA 2N4399 60 60 5.0 7.5 30 2N5745 80 80 Unit Vdc Vdc Vdc Adc Adc W W 0 C Unit 0 @ TA =+ 250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range 20 5.0 115 -55 to +200 Max. 3 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) 0.875 35 TO-3* (TO-204AA) C/W 2) Derate linearly @ 28.57 mW/0C for TA > +250C Derate linearly @ 1.15 W/0C for TC > +1000C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N4399 2N5745 2N4399 2N5745 2N4399 2N5745 V(BR)CEO 60 80 100 100 5.0 5.0 5.0 Vdc ICEO µAdc ICEX IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N4399, 2N5745 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERIST...