TPCC8009

TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCC8009 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.2 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 30 ±20 24 72 27 1.9 0.7 75 24 150 −55 to 150 www.DataSheet.net/ Unit V V V A W W W mJ A °C °C Pulsed (Note 1) (Tc = 25℃) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Drain power dissipation Drain power dissipation Drain power dissipation Single-pulse avalanche energy (Note 3) Avalanche current Channel temperature Storage temperature range 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3X1A Note: For Notes 1 to 3, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing t...