TPCC8103

TPCC8103 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ) TPCC8103 Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 9.4 mΩ (typ.) (VGS = −10 V) Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −18 −54 27 1.9 www.DataSheet.net/ Unit V V V A W W W mJ A mJ °C °C 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE Pulsed (Note 1) (Tc = 25°C) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Drain power dissipation Drain power dissipation Drain power dissipation 0.7 84 −18 1.59 150 −55 to 150 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25°C) (Note 4) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3X1A Weight: 0.02 g (typ.) Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum rati...