NTNS3A65PZ

NTNS3A65PZ MOSFET – Single, P-Channel, Small Signal, SOT-883 (XDFN3), 1.0 x 0.6 x 0.4 mm -20 V, -281 mA Features Single P−Channel MOSFET Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for Extremely Thin Environments Such as Portable Electronics Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package 1.5 V Gate Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications High Side Switch High Speed Interfacing Optimized for Power Management in Ultra Portable Solutions MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD −20 V ±8 V −281 mA −202 −332 155 mW t≤5s 218 Pulsed Drain Current tp = 10 ms IDM −842 mA Operating Junction and Storage Temperature TJ, TSTG −55 to °C 150 Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS −130 mA TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. 2. Pulse...