2N5795 TRANSISTOR Datasheet

2N5795 Datasheet, PDF, Equivalent


Part Number

2N5795

Description

PNP DUAL SILICON TRANSISTOR

Manufacture

Microsemi Corporation

Total Page 2 Pages
Datasheet
Download 2N5795 Datasheet


2N5795
PNP DUAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/496
Devices
2N5795
2N5796
2N5796U
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Total Power Dissipation
@ TA = +250C
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/0C for TA +250C
2) Derate linearly 3.43 mW/0C for TA +250C
PT
TJ, Tstg
Value
60
60
5.0
600
One(1)
Both(2)
Section Sections
0.5 0.6
-65 to +175
Units
Vdc
Vdc
Vdc
mAdc
W
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
V(BR)CEO
VCB = 50 Vdc
VCBO = 60 Vdc
Emitter-Base Cutoff Current
ICBO
VEB = 3.0 Vdc
VEB = 5.0 Vdc
IEBO
Min.
60
TO-78*
6 PIN SURFACE
MOUNT*
*See
MILPRF19500/496 for
package outline
Max.
Unit
Vdc
10 ηAdc
10 µAdc
100 ηAdc
10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
Page 1 of 2

2N5795
2N5795, 2N5796 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 100 µAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
2N5795
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
IC = 100 µAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
2N5796
2N5796U
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 2.0 Vdc, IC = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc
Turn-Off Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc
1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
Cibo
ton
toff
Min. Max.
Unit
40
40
40
40 150
20
20
75
100
100
100 300
50
50
0.4 Vdc
1.6
1.3 Vdc
2.6
2.0 10
8.0
25
pF
pF
50 ηs
140 ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
Page 2 of 2


Features TECHNICAL DATA PNP DUAL SILICON TRANSIST OR Qualified per MIL-PRF-19500/496 Devi ces 2N5795 2N5796 2N5796U Qualified Le vel JAN JANTX JANTXV MAXIMUM RATINGS R atings Collector-Emitter Voltage Collec tor-Base Voltage Emitter-Base Voltage C ollector Current Symbol VCEO VCBO VEBO IC @ TA = +250C Value 60 60 5.0 600 Units Vdc Vdc Vdc mAdc TO-78* One Tot al Power Dissipation PT TJ, Tstg (1) Section 0.5 Both Sections 0.6 (2) W 0 Operating & Storage Junction Tempera ture Range 1) Derate linearly 2.86 mW/0 C for TA ≥ +250C 2) Derate linearly 3 .43 mW/0C for TA ≥ +250C -65 to +175 C 6 PIN SURFACE MOUNT* *See MILPRF19 500/496 for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless othe rwise noted) Characteristics Symbol V(B R)CEO ICBO Min. 60 Max. Unit Vdc OFF CHARACTERISTICS Collector-Emitter Brea kdown Voltage IC = 10 mAdc Collector-Ba se Cutoff Current VCB = 50 Vdc VCBO = 6 0 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc 10 10 100 10 ηAdc µAdc ηAdc µAdc IEBO 6 .
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