SDP06S60 SDT06S60
Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor materi...
SDP06S60 SDT06S60
Silicon Carbide
Schottky Diode Worlds first 600V
Schottky diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior Ideal diode for Power Factor Correction up to 1200W 1) No forward recovery
thinQ!¥ SiC
Schottky Diode
Product Summary VRRM Qc IF
PG-TO220-2-2.
600 21 6
P-TO220
V nC A
Type SDP06S60 SDT06S60
Package P-TO220-3 PG-TO220-2-2.
Ordering Code Q67040-S4371
www.DataSheet.net/
Marking D06S60 D06S60
Pin 1 n.c.
Pin 2 C
Pin 3 A
Q67040-S4446
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz
TC=25°C, tp=10ms
Value 6 8.4 21.5 28 60 2.3 600 600 57.6 -55... +175
Unit A
IF IFRMS
Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM IFMAX ³i2dt VRRM VRSM Ptot Tj , Tstg
Page 1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature
Rev. 2.4
A²s V W °C
2008-06-02
Datasheet pdf - http://www.DataSheet4U.co.kr/
SDP06S60 SDT06S60
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded
RthJC RthJA
Symbol min. -
Values typ. max. 2.6 62
Unit
K/W
Electric...