WST2907

WST2907/S PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION ◇ Collector Current Ic=600mA ◇ Complementary to WST2222/S 3 SOT-23 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature ◇Mark Information (Ta=25℃) 2 1 1. Emitter Symbol VCBO VCEO VEBO IC PC Tj Tstg Value -60 -40 -5 -600 TO-92 :650 SOT-23(S):350 Unit V V V mA mW ℃ ℃ TO-92 2. Base 3. Collector 150 -55~ +150 3 1 2 ◇Ordering Information Device Package TO-92 SOT-23 2 B www.DataSheet.net/ WST2907 WST2907S ELECTRICAL CHARACTERISTICS Characteristic Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Output Capacitance Transition Frequency Turn on Time Turn off Time Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) VBE(sat) Cob fT tON tOFF (Ta=25℃, unless otherwise specified) Test Condition IC=-10㎂ ,IE=0 IC=-10mA ,IB=0 IE=-10㎂ ,IC=0 VCB=-50V ,IE=0 VCE=-10V,IC=-10mA IC=-150㎃, IB=-15㎃ IC=-500㎃, IB=-50㎃ IC=-150㎃, IB=-15㎃ IC=-500㎃, IB=-50㎃ VCB=-10V,f=1MHZ VCE=-20V, IC=-50㎃ Vcc=-30V,Ic=-150mA, IB1=-15mA Vcc=-6V,Ic=-150mA, IB1=IB2=15mA Min -60 -40 -5 TYP MAX Unit V V V -20 75 -0.4 -1.6 -1.3 -2.6 8 250 45 100 ㎁ V V PF MHZ ns ns JAN.2003 REV:01 copyright@wooseok s.tech corp. All righ...