AV3906

@vic AV3906 TO-92 Plastic-Encapsulate Transistors AV3906 TRANSISTOR（ PNP ） FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ TO—92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEo IEBO HFE（1） DC current gain HFE（2） Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE= -1 V , IC=-50 mA IC= -50 mA, IB= -5mA IC= -50mA, IB= -5 mA VCE= -20 V, IC= -10 mA 60 -0.4 -0.95 V V Test conditions Ic= -100 μA ， IE=0 IC= -1 mA , IB=0 www.DataSheet.net/ MIN -40 -40 -5 MAX UNIT V V V IE= -100 μA， IC=0 VCB= -40 V , IE=0 VCB= -40 V , IB=0 VEB= -5 V , IC=0 VCE= -1 V , IC= -10 mA -0.1 -0.1 -0.1 100 300 μA μA μA Transition frequency fT f =100 MHz 250 MHz CLASSIFICATION OF HFE(1) Rank Range O 100-200 Y 200-300 G 300-400 Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com Datasheet pdf - http://www.DataSheet4U.co.kr/ @vic TYPICAL PERFORMANCE CHARACTERISTICS hEF, DC CURRENT GAIN (NORMALIZED) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 TJ = +125°C +25°C -55°C AV3906 VCE...