2N2222AHR

2N2222AHR Datasheet Rad-Hard 50 V, 0.8 A NPN transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10450 Product status link 2N2222AHR Features Vceo IC(max.) 50 V Hermetic packages ESCC qualified 100 krad 0.8 A HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N2222AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5201/002 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part-number 2N2222ARUBx 2N2222AUBx SOC2222ARHRx SOC2222AHRx Product summary Qualification system Agency specification ESCC Flight 5201/002 ESCC Flight 5201/002 ESCC Flight 5201/002 ESCC Flight 5201/002 Note: See Table 7 for ordering information. Package UB UB LCC-3 LCC-3 Radiation level 100 krad - 100 krad - DS6561 - Rev 25 - January 2022 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCBO VCEO VEBO IC Collector-base voltage (IE = 0) Collector-emit...