2N2905AHR

2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range 60 V 0.6 A > 100 -65°C to +200°C ■ ■ ■ ■ ■ Hi-Rel PNP bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. Internal schematic diagram TO-39 Description The 2N2905AHR is a silicon planar epitaxial PNP transistor in a TO-39 package. It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5202-002 specification. In case of discrepancies between this datasheet and ESCC detailed specification, the latter prevails. www.DataSheet.net/ Table 1. Device summary Package TO-39 TO-39 Lead finish Gold Solder Dip Gold Marking 520200201 520200202 2N2905AT1 Type ESCC Flight Engineering model EPPL Yes Packaging Strip pack Strip pack Order codes 2N2905AHR 2N2905AHR October 2012 This is information on a product in full production. Doc ID 15295 Rev 3 1/8 www.st.com 8 Datasheet pdf - http://www.DataSheet4U.co.kr/ Electrical ratings 2N2905AHR 1 Electrical ratings Table 2. Symbol VCBO VCEO VEBO IC PTOT TSTG TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Total dissipation at Tamb ≤ 25 °C Total dissipation at Tc ≤ 25 °C Storage temperature Max. operati...